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PHOTOMULTlPLlER TUBES
R3788, R4332
High Sensitivity, Bialkali Photocathode 28mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type
FEATURES
Spectral Response R3788 .................................................... 185 to 750 nm R4332 ..................................................... 160 to 750 nm High Cathode Sensitivity Luminous ........................................... 120 A/lm Typ. Radiant at 420nm .................................. 90mA/W Typ. Quantum Efficiency at 210nm ......... 40% Typ. (R4332) High Anode Sensitivity (at 1000V) Luminous ............................................... 1200A/lm Typ. Radiant at 420nm ............................ 9.0 105 A/W Typ.
APPLICATIONS
Fluorescence Spectrophotometers Emission Spectrophotometers Atomic Absorption Spectrophotometers
GENERAL
Parameter
Spectral Response R3788 R4332 Wavelength of Maximum Response Photocathode MateriaI Minimum Effective Area Window Material R3788 R4332 Dynode Secondary Emitting Surface Structure Number of Stages Direct Interelectrode Capacitances Anode to Last Dynode Anode to All Other Electrodes Base Weight SuitabIe Socket SuitabIe Socket Assembly Bialkali Circular-cage 9 4 6 11-pin base JEDEC No. B11-88 45 E678-11A (option) E717-21(option) pF pF
Figure 1: Typical Spectral Response
Description
185 to 750 160 to 750 420 Bialkali 8 24 UV glass Fused silica
Unit
TPMSB0081EA
100
nm
PHOTOCATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%)
nm nm
R4332
CATHODE RADIANT SENSITIVITY
QUANTUM EFFICIENCY 10
mm
R3788 1
0.1
0.01 100
200
300
400
500
600
700
800
g
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c) 1994 Hamamatsu Photonics K.K.
PHOTOMULTlPLlER TUBES R3788, R4332
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage Between Anode and Cathode Between Anode and Last Dynode Average Anode Current A 1250 250 0.1 Vdc Vdc mA
Value
Unit
CHARACTERISTlCS (at 25
Parameter
)
Min. R3788 Typ.
30 (at 250nm) 120 31 50 90 0.01 10 500 1200 3.1 105 5.0 105 9.0 105 1.0 107 5 50 500
Max.
Min.
R4332 Typ.
40 (at 210nm) 120 60 68 90 0.01 10 1200 6.0 105 6.8 105 9.0 105 1.0 5 107
Max.
Unit
% A/lm mA/W mA/W mA/W A/lm-b A/lm A/W A/W A/W
Cathode Sensitivity Quantum Efficiency at Peak Wavelength Luminous B Radiant at 194nm 210nm 420nm Red/White Ratio C Blue D Anode Sensitivity Luminous E Radiant at 194nm 210nm 420nm Gain E Anode Dark Current
F
100
100
50
nA
(After 30minutes Storage in the darkness) ENI(Equivalent Noise Input) G Time Response Anode Pulse Rise Time H Electron Transit Time I Transit Time Spread (TTS) J Anode Current Stability Light Hysteresis Voltage Hysteresis
K E
1.4
10-16 2.2 22 1.2 0.1 1.0
1.4
10-16 2.2 22 1.2 0.1 1.0
W ns ns ns % %
NOTES
A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856K. Supply voltage is 100 volts between the cathode and all other electrodes connected together as anode. C: Red/White ratio is the quotient of the cathode current measured using a red filter(Toshiba R-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same conditions as Note B. D: The value is cathode output current when a blue filter(Corning CS-5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. E: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. Table 1:Voltage Distribution Ratio
Electrodes Distribution Ratio K 1 Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 1 1 1 1 1 1 P
F: Measured with the same supply voltage and voltage distribution ratio as Note E after removal of light. G:ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = where 2q.ldb.G. f
S q = Electronic charge (1.60 10-19 coulomb). ldb = Anode dark current(after 30 minutes storage) in amperes. G = Gain. f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. H: The rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse.
SuppIy Voltage : 1000Vdc K : Cathode, Dy : Dynode,
P : Anode
I: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. J: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. K: Hysteresis is temporary instability in anode current after light and voltage are applied.
Hysteresis =
lmax li
lmin.
100(%)
(1)Current Hysteresis The tube is operated at 750 volts with an anode current of 1 micro-ampere for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 volts with an anode current of 0.1 micro-ampere for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 volts. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation.
ANODE CURRENT
li
l max. l min. TIME
0
5
6
7 (minutes)
TPMSB0002EA
Figure 2: Anode Luminous Sensitivity and Gain Characteristics
105
TPMSB0032EB
Figure 3: Typical Time Response
TPMSB0004EB
108
100 80
GAIN(TYP.) 104 ANODE LUMINOUS SENSITIVITY (A/lm) 107
60 40
TRAN SIT T IME
103
106
20
102 ANOD LUMINOUS SENSITIVITY (TYP.) 101 ANODE LUMINOUS SENSITIVITY (MIN.) 100
105
TIME (ns)
GAIN
10 8 6
104
4
RISE
TIME
103
2
10-1 500
600
700
800
1000
1200
102 1500
1
300
500
700
1000
1500
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 4: Typical ENI with Wavelength
TPMSB0082EA
Figure 5: Typical EADCI (Equivalent Anode Dark Current Input) vs. Supply Voltage
TPMSB0034EA
10-12
10-9
EQUIVALENT NOISE INPUT (W)
10-13
10-10
R4332
EADCI (lm)
10-14
10-11
R3788
10-15
10-12
10-16 100
200
300
400
500
600
700
800
10-13 300
400
500
600
800
1000
1500
WAVELENGTH (nm)
SUPPLY VOLTAGE (V)
PHOTOMULTlPLlER TUBES R3788, R4332
Unit : mm Figure 6: Dimensional Outline and Basing Diagram
28.5 1.5 T9 BULB PHOTOCATHODE 24MIN. 8MIN. DY5 DY4 4 80MAX. DY3 3 94MAX. DY2 2 1 DY1 11 K 10 0.25 DY6 6
Figure 7: Socket E678-11A (Option)
49 38
5
7 DY7 8 DY8 9 DY9 P
5
3.5 29 4 18 33
49.0
DIRECTION OF LIGHT
32.2 0.5 11 PIN BASE JEDEC No.B11-88
BOTTOM VIEW (BASING DIAGRAM)
TPMSA0005EB
TACCA0008EB
Figure 8: D Type Socket Assembly E717-21 (Option)
5 3.5 33.0 0.3
PMT P
SOCKET PIN No. 10
R10
38.0 0.3 49.0 0.3
C3 C2 C1
SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) POWER SUPPLY GND AWG22 (BLACK)
DY9 DY8 DY7 DY6
9 R9 8 R8 7 R7 6 R6 5 R5 4 R4 3 R3 2 R2 1 R1 11
-HV
29 4.8
DY5 DY4 DY3
41.0 0.5
31.0 0.5 HOUSING (INSULATOR) POTTING COMPOUND
DY2 DY1 K
450 10
AWG22 (VIOLET)
R to R10 : 330k C1 to C3 : 0.01 F
TACCA0002ED
Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply.
Warning-Personal Safety Hazards Electrical Shock-Operating voltages applied to this device present a shock hazard.
HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Farogatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741
TPMS1021E01 FEB. 1994

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